IRFPC60LC-P Datasheet | Specifications & PDF Download

HEXFET® Power MOSFET PD - 9.1234 IRFPC60LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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iscN-Channel MOSFET Transistor IRFPC60LC ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.4Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 600 VGS = 10 V 120 Qgs (nC) 29 Qgd (nC)

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PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ci

Rating: 1 ★ (1 votes)