IRFR5410 Datasheet | Specifications & PDF Download

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IRFR5410 HEXFET Power MOSFET

PD - 9.1533A l l l l l l l Ultra Low On-Resistan.

Infineon

AUIRFR5410 - Power MOSFET

 AUTOMOTIVE GRADE   AUIRFR5410 Features  Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating T.
Rating: 1 ★ (2 votes)
International Rectifier

AUIRFR5410 - Power MOSFET

 PD - 96344 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● ● AUIRFR5410 HEXFET® Power MOSFET D ● ● Advanced Planar Technology P-Channel MOSFET Low On-Res.
Rating: 1 ★ (2 votes)
International Rectifier

IRFR5410 - HEXFET Power MOSFET

 PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.
Rating: 1 ★ (1 votes)
International Rectifier

IRFR5410PBF - HEXFET Power MOSFET

 PD -95314A l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit.
Rating: 1 ★ (1 votes)
INCHANGE

IRFR5410 - N-Channel MOSFET

 isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche te.
Rating: 1 ★ (1 votes)
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