IRFR812 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFR812, IIRFR812 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85Ω ·Enhancement mode: ·100% avalanche tes

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PD -97773 IRFR812TRPbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET

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