IRFU310 Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFU310 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved

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www.vishay.com IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF

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IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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