IRFU5410 Datasheet | Specifications & PDF Download

IRFU5410 HEXFET Power MOSFET

PD - 9.1533A l l l l l l l Ultra Low On-Resistan.

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit

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PD -95314A l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Swit

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