IRG7PH35UPBF Datasheet | Specifications & PDF Download

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction tempe

Rating: 1 ★ (4 votes)

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction tempe

Rating: 1 ★ (3 votes)