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IRG7PH35UPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG7PH35UPBF
Manufacturer	International Rectifier ↗
File Size	397.82 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35UPBF-InternationalRectifier.pdf

IRG7PH35UPBF Product details

Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I.

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Published: Mar 31, 2014 |