Part number:
IRG7PH35UPBF
Manufacturer:
International Rectifier
File Size:
397.82 KB
Description:
Insulated gate bipolar transistor.
IRG7PH35UPBF Datasheet (397.82 KB)
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
IRG7PH35UPBF Datasheet (397.82 KB)
IRG7PH35UPBF
International Rectifier
397.82 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG7PH30K10PBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
