IRGP4263-EPBF Datasheet | Specifications & PDF Download

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IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipol.

International Rectifier

IRGP4263D-EPbF - Insulated Gate Bipolar Transistor

   VCES = 650V IC = 60A, TC =100°C IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.
Rating: 1 ★ (2 votes)
International Rectifier

IRGP4263-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

   IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC =.
Rating: 1 ★ (2 votes)
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