IRGP4266-EPBF Datasheet | Specifications & PDF Download

X

IRGP4266-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar T.

International Rectifier

IRGP4266-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

 IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75.
Rating: 1 ★ (2 votes)
International Rectifier

IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

   IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.
Rating: 1 ★ (2 votes)
logo
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts