IRGP4790-EPbF Datasheet | Specifications & PDF Download

IRGP4790-EPbF Insulated Gate Bipolar Transistor

VCES = 650V IC = 90A, TC =100°C tSC 5.5.

VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar I

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IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs

Rating: 1 ★ (2 votes)