IRGP4790-EPbF Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Col
IRGP4790PBF-InternationalRectifier.pdf
Datasheet Details
IRGP4790-EPbF, IRGP4790PBF
International Rectifier
772.45 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4790-EPbF, IRGP4790PBF.
Please refer to the document for exact specifications by model.
IRGP4790-EPbF Distributor
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