* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Col
IRGP4790-EPbF Datasheet (772.45 KB)
IRGP4790-EPbF
International Rectifier
772.45 KB
Insulated gate bipolar transistor.
VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS
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