IRGP4790-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
VCES = 650V
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
Applications Industrial Motor Drive UPS Solar I.
IRGP4790D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4790DPbF IRGP4790D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 5.5µs.
IRGP4790DPbF - INSULATED GATE BIPOLAR TRANSISTOR
(International Rectifier)
IRGP4790DPbF IRGP4790D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 5.5µs.
IRGP4740D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4740DPbF IRGP4740D-EPbF
VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C
G
Insulated Gate Bipolar Transistor with Ultrafast Soft Reco.
IRGP4740DPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4740DPbF IRGP4740D-EPbF
VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C
G
Insulated Gate Bipolar Transistor with Ultrafast Soft Reco.
IRGP4750D-EPbF - Insulated Gate Bipolar Transistor
(International Rectifier)
IRGP4750DPbF IRGP4750D-EPbF
VCES = 650V
IC = 50A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications Industrial .