IRGP4790D-EPbF Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP4790D‐EPbF TO‐247AD E Emitter Benefits High Effici
IRGP4790DPbF-InternationalRectifier.pdf
Datasheet Details
IRGP4790D-EPbF, IRGP4790DPbF
International Rectifier
868.87 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4790D-EPbF, IRGP4790DPbF.
Please refer to the document for exact specifications by model.
IRGP4790D-EPbF Distributor
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