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IRGP4790D-EPbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4790D-EPbF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF  TO‐247AC  C Collector E GC IRGP4790D‐EPbF  TO‐247AD  E Emitter Benefits High Effici

IRGP4790D-EPbF Datasheet (868.87 KB)

Preview of IRGP4790D-EPbF PDF

Datasheet Details

Part number:

IRGP4790D-EPbF

Manufacturer:

International Rectifier

File Size:

868.87 KB

Description:

Insulated gate bipolar transistor.
  IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 5.5µs.

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IRGP4790D-EPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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