IRGP4790DPbF Datasheet - International Rectifier

IRGP4790DPbF, INSULATED GATE BIPOLAR TRANSISTOR

IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs.

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IRGP4790DPbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGP4790DPbF

Manufacturer:

International Rectifier

File Size:

868.87 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP4790D‐EPbF TO‐247AD E Emitter Benefits High Effici

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4790DPbF Distributors

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IRGP4790DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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