IRL3705Z Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL3705Z，IIRL3705Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement

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PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0

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PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0

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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

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Isc N-Channel MOSFET Transistor IRL3705ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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  AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Re

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PD - 96345 AUTOMOTIVE GRADE Features l l l l l l l l HEXFET® Power MOSFET D AUIRL3705Z AUIRL3705ZS AUIRL3705ZL V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0

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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

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  AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Re

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  AUTOMOTIVE GRADE Features  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Re

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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A

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