IRLI530N Datasheet | Specifications & PDF Download

IRLI530N HEXFET Power MOSFET

PD - 9.1350B PRELIMINARY Logic-Level Gate Drive A.

IRLI530N (International Rectifier)

HEXFET Power MOSFET

PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead C

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IRLI530NPBF (International Rectifier)

HEXFET Power MOSFET

IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist

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IRLI530NPbF (Infineon)

Power MOSFET

 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm

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