IRLML2502 Datasheet | Specifications & PDF Download

PD - 93757C IRLML2502 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in T

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VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 0.045 8.0 4.2 V Ω nC A IRLML2502PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3™(SOT-23

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PD - 96163A IRLML2502GPbF l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast

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IRLML2502GTRPBF-VB IRLML2502GTRPBF-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5

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isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tes

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IRLML2502TRPBF N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.0

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IRLML2502PbF l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l L

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