IRLML5203 Datasheet | Specifications & PDF Download

UMW IRLML5203TR -30V P-ChanneI MOSFET 1.Description The IRLML5203TR uses advanced trench technology to provide excellent RDS(on) with low gate charge

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PD - 93967 PROVISIONAL IRLML5203 HEXFET® Power MOSFET RDS(on) max (mΩ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MO

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These

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VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 98 mΩ 165 9.5 nC -3.0 A IRLML5203PbF-1 HEXFET® Power MOS

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free D

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