IRLML6302 Datasheet | Specifications & PDF Download

l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast S

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l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast S

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Isc P-Channel MOSFET Transistor ·FEATURES ·With SOT-23 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche teste

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VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.60 2.4 -0.78 V Ω nC A IRLML6302PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM F

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