l Generation V Technology l Ultra Low On-Resistanc.
International Rectifier
IRLML6302 - HEXFET Power MOSFET
l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast S.
International Rectifier
IRLML6302PBF - Power MOSFET
l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast S.
International Rectifier
IRLML6302PBF-1 - Power MOSFET
VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.60 2.4 -0.78 V Ω nC A IRLML6302PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM F.
INCHANGE
IRLML6302 - P-Channel MOSFET
Isc P-Channel MOSFET Transistor ·FEATURES ·With SOT-23 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche teste.