IRLR2905 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche te

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isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanch

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PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperat

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PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU

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IRLR2905ZTRPBF N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 58 56 FEATURE

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IRLR/U2905PbF l l l l l l l l PD- 95084A Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced P

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AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 • Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175°C Oper

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PD - 97583 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● ● AUIRLR2905Z HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resis

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  AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating

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PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperat

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