IRLR3114Z Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.9mΩ ·Enhancement mode: ·100% avalanche

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AUTOMOTIVE GRADE PD - 96381 AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C O

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Swi

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T

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