IRLZ34N Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ34N， IIRLZ34N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤35mΩ ·Enhancement mo

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1

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www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C

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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperat

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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperat

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION

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www.DataSheet4U.com PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fa

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www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C

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