IS-54 Datasheet | Specifications & PDF Download

FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC5

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor November 2014 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon T

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VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 15 A VS-MBRB25..CTPbF VS-MBR25..CT-1PbF Base common c

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www.vishay.com VS-MBRB25..CT-M3, VS-MBR25..CT-M3 Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A 2 1 3 1 2 D2PAK (TO-263AB)

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030 or 1090 MHz RE

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LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix

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Analog Peripherals - 12-Bit ADC • Up to 200 ksps • Up to 25 external single-ended inputs • VREF from on-chip VREF, external pin or VDD • Internal or e

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Analog Peripherals - 12-Bit ADC • Up to 200 ksps • Up to 25 external single-ended inputs • VREF from on-chip VREF, external pin or VDD • Internal or e

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC546/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC546, B BC547, A, B, C BC548,

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Semiconductor July 1998 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MO

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14 Advanced System Controllers AIS-Q454 Advanced Mini-ITX System Controller With Intel® Core™ 2 Duo/ Quad Processor Features ■■ Intel® Power & HDD L

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP

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HI-SINCERITY MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page

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DP2540A High Precision CC/CV Primary-Side PWM Power Switch GENERAL DESCRIPTION DP2540A is a high performance offline PWM power switch for low power A

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resista

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APL3547A Power-Distribution Switches with Soft Start Features General Description  84mΩ High Side MOSFET  Soft Start Time Programmable by Extern

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