High Voltage, High Gain BIMOSFETTM Monolithic Bipo.
IXYS Corporation
IXBH16N170A - Bipolar MOS Transistor
Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.
IXYS
IXBH16N170 - BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.
