High Voltage, High Gain BIMOSFETTM Monolithic Bipo.
IXYS Corporation
IXBH42N170 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.
IXYS Corporation
IXBH42N170A - Monolithic Bipolar MOS Transistor
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(.
