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IXBN75N170 Monolithic Bipolar MOS Transistor

Preliminary Technical Information BiMOSFETTM Mono.

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VC

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BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES

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