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IXBN75N170 Datasheet - IXYS

IXBN75N170 Monolithic Bipolar MOS Transistor

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 V V V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 680 ICM = 150 VCE < 0.8

IXBN75N170 Datasheet (169.13 KB)

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Datasheet Details

Part number:

IXBN75N170

Manufacturer:

IXYS

File Size:

169.13 KB

Description:

Monolithic bipolar mos transistor.

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