Part number:
IXBN75N170
Manufacturer:
IXYS
File Size:
169.13 KB
Description:
Monolithic bipolar mos transistor.
Datasheet Details
Part number:
IXBN75N170
Manufacturer:
IXYS
File Size:
169.13 KB
Description:
Monolithic bipolar mos transistor.
IXBN75N170, Monolithic Bipolar MOS Transistor
Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 V V V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 680 ICM = 150 VCE < 0.8
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