IXBN75N170 Datasheet - IXYS

IXBN75N170 Monolithic Bipolar MOS Transistor

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 V V V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 680 ICM = 150 VCE < 0.8

IXBN75N170-IXYS.pdf