IXBN42N170A Datasheet - IXYS

IXBN42N170A Monolithic Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns E Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, T.

IXBN42N170A-IXYS.pdf