Part number:
IXBN75N170A
Manufacturer:
IXYS
File Size:
241.79 KB
Description:
Bipolar mos transistor.
Datasheet Details
Part number:
IXBN75N170A
Manufacturer:
IXYS
File Size:
241.79 KB
Description:
Bipolar mos transistor.
IXBN75N170A, Bipolar MOS Transistor
BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous 1700 V 1700 V ±20 V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 75 A 42 A 350 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE < 0.8
IXBN75N170A Features
* International Standard Package
* High Blocking Voltage
* Fast Switching
* Isolation Voltage 3000 V~
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement
* Easy to Mount with 2 Screws
* Intergra
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