IXBN75N170A Bipolar MOS Transistor

IXYS

Description

BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES .

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Datasheet Specifications

Part number: IXBN75N170A
Manufacturer: IXYS
File Size: 241.79 KB
Datasheet: IXBN75N170A-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* International Standard Package
* High Blocking Voltage
* Fast Switching
* Isolation Voltage 3000 V~
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement
* Easy to Mount with 2 Screws
* Intergra

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* UPS
* AC Motor Drives
* Substitutes for High Voltage MOSFET © 2016 IXYS CORPORATION, All Rights Reserved DS98938B(8/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS IC = IC90, VCE = 10V, Note 1 Cies Coes Cr

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IXBN75N170A Bipolar MOS Transistor IXYS

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