IXBN75N170A Datasheet - IXYS

IXBN75N170A Bipolar MOS Transistor

BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous 1700 V 1700 V ±20 V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 75 A 42 A 350 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE < 0.8.

IXBN75N170A Features

* International Standard Package

* High Blocking Voltage

* Fast Switching

* Isolation Voltage 3000 V~

* High Current Handling Capability

* Anti-Parallel Diode Advantages

* High Power Density

* Low Gate Drive Requirement

* Easy to Mount with 2 Screws

* Intergra

IXBN75N170A-IXYS.pdf

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Datasheet Details

Part number:

IXBN75N170A

Manufacturer:

IXYS

File Size:

241.79 KB

Description:

Bipolar mos transistor.

IXBN75N170A Distributor

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IXBN75N170A IXBN75N170A Bipolar MOS Transistor IXYS