IXBT42N170 Datasheet | Specifications & PDF Download

IXBT42N170 Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipo.

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG

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Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(

Rating: 1 ★ (1 votes)