IXTA120N04T2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTA120N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche vo

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TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 40V 120A 6.1mΩ TO-263 Symbo

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