TrenchMVTM Power MOSFET N-Channel Enhancement Mode.
IXYS Corporation
IXTA130N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) .
IXYS Corporation
IXTA130N10T7 - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ Symbol VDSS VDGR VGSM ID25.
INCHANGE
IXTA130N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.