PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-C.
IXYS Corporation
IXTA7N60PM - Power MOSFET
Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode I.
INCHANGE
IXTA7N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and curre.
IXYS
IXTA7N60P - Power MOSFET
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V D.