IXTH200N075T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(

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