Preliminary Technical Information Trench Gate Pow.
IXYS Corporation
IXTH200N075T - Power MOSFET
Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.
INCHANGE
IXTH200N075T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.