TrenchMVTM Power MOSFET N-Channel Enhancement Mode.
IXYS Corporation
IXTH200N10T - Power MOSFET
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst.
INCHANGE
IXTH200N10T - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTH200N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(.
