IXTP10N60P Datasheet | Specifications & PDF Download

IXTP10N60P N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP10N60P ·FEA.

PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740

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isc N-Channel MOSFET Transistor IXTP10N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt

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www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 0.74Ω@VGS=10V ·100%

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