IXTP10N60P (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
IXTP10N60P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 740mΩ@VGS=10V ·Fully characterized avalanche volt
(31 views)
IXTP10N60P (IXYS)
Power MOSFET
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = 600V ID25 = 10A RDS(on) ≤ 740
(29 views)
IXTP10N60PM (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 0.74Ω@VGS=10V ·100%
(29 views)
IXTP10N60PM (IXYS Corporation)
PolarHV Power MOSFET
www.DataSheet4U.com
Preliminary Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
(22 views)
