IXTP1R4N100P datasheet | Specifications & PDF Download

IXTP1R4N100P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode A.

INCHANGE

IXTP1R4N100P - N-Channel MOSFET

isc N-Channel MOSFET Transistor IXTP1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo.

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IXYS

IXTP1R4N100P - Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .

Rating: 1 ★ (1 votes)