TrenchPTM Power MOSFETs Preliminary Technical Inf.
IXYS
IXTP48P05T - Power MOSFET
TrenchPTM Power MOSFETs Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T VDSS = ID25 = ≤RDS(on) - 50V - 48A 30mΩ P-Channel Enha.
INCHANGE
IXTP48P05T - TO-220C P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤30mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
INCHANGE
IXTP48P05T - TO-252 P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤30mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
