isc N-Channel MOSFET Transistor ·FEATURES ·Drai.
IXTQ200N06P - Power MOSFET
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions.IXTQ200N06P - N-ChannelMOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc.