IXTQ60N20T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Swi

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TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP

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