PolarTM Power MOSFET N-Channel Enhancement Mode Av.
IXYS
IXTU4N60P - PolarHV Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.
INCHANGE
IXTU4N60P - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXTU4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltag.
