Ic-64k Datasheet | Specifications & PDF Download

PPT 10/100Base-T Dual port Magnetics Features: “Meet The Isolation,Insertion Loss and Return Loss Requirements of IEEE802.3 “Available Industry Stan

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M7040N 64K x 72-bit Entry NETWORK PACKET SEARCH ENGINE PRELIMINARY DATA FEATURES SUMMARY s 64K DATA ENTRIES IN 72-BIT MODE s Figure 1. 388-ball PBGA

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SRAM Austin Semiconductor, Inc. 64K x 1 SRAM SRAM MEMORY ARRAY MT5C6401 PIN ASSIGNMENT (Top View) 22-Pin DIP (C) (300 MIL) A0 A1 A2 A3 A4 A5 A6 A7 Q

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MITSUBISHI LSls MSL2764K, -2 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5L2764 K is a hi

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INTEGRATED CIRCUITS 89C536/89C538 80C51 8-bit microcontroller family 16K/64K/512 FLASH Preliminary specification Supersedes data of 1997 Dec 02 IC20

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MIC:RON 1-· ,,,c, ,,CW PRELIMINARY MT5C64K16A1 REVOLUTIONARY PINOUT 64K x 16 SRAM SRAM FEATURES • Fast access times: 12, 15,20 and 25ns • Fa

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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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PRELIMINARY MX10EXA XA 16-bit Microcontroller Family 64K Flash/2K RAM, Watchdog, 2UARTs FEATURE • 4.5V to 5.5V • 64K bytes of on-chip Flash program m

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W27C512 64K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read O

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FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industri

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MIC:RON 1-· , ,,,, m,,',, PRELIMINARY MT5LC64K16D4 REVOLUTIONARY PINOUT 64K x 16 SRAM SRAM FEATURES • All I/O pins are 5V tolerant • Fast access

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Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

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UU:::RON 1-· ,,, ,,, ocno , , ADVANCE MT58LC64K1882 64K X 18 SYNCHRONOUS SRAM SYNCHRONOUS SRAM FEATURES • Fast access times: 9, 10, 12 and 17ns •

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SRAM FEATURES • All I/O pins are 5V tolerant • High speed: 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single

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IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MARCH 2020 FEATURES HIGH SPEED: (IS61/

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Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

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~SMs16sP-70, -10, MITSUBISHI LSls -12, -15, -70L, -10L, -12L, -lsL 6SS36-BIT (8192 WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5165P is a 6

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