K7A201800B Datasheet, Sram, Samsung semiconductor

✔ K7A201800B Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD=

✔ K7A201800B Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW

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K7A201800B

Manufacturer:

Samsung semiconductor

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📄 Datasheet

Description:

64kx36 & 64kx32-bit synchronous pipelined burst sram. The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance sec

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K7A201800B 64Kx36 64Kx32-Bit Synchronous Pipelined Burst SRAM Samsung semiconductor