K7A201800B, K7A-2036 Datasheet - Samsung semiconductor

K7A201800B, K7A-2036, 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

K7A203600B K7A203200B K7A201800B Document Title Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipeline.
The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache o.

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K7A-2036-00B.pdf

K7A201800B Datasheet Preview — This datasheet PDF includes multiple part numbers: K7A201800B, K7A-2036. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K7A201800B, K7A-2036

Manufacturer:

Samsung semiconductor

File Size:

273.66 KB

Description:

64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

Note:

This datasheet PDF includes multiple part numbers: K7A201800B, K7A-2036.
Please refer to the document for exact specifications by model.

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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K7A-2036 64Kx36 64Kx32-Bit Synchronous Pipelined Burst SRAM Samsung semiconductor

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