| Part Number | Description | Manufacture |
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SILICON CONTROLLED RECTIFIERS VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operat |
 Power Innovations Limited |
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SILICON CONTROLLED RECTIFIERS ture 3.2 mm from case for 10 seconds TICP107D TICP107M TICP107D TICP107M SYMBOL VDRM VRRM IT(RMS) ITSM di/dt IGM TJ Tstg TL VALUE 400 600 400 600 1 15 100 0.2 -40 to +110 -40 to +125 230 UNIT V V A A A/µs A °C °C °C NOTES: 1. These values apply when |
Power Innovations Limited |
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7.9-11GHz 12W GaN PA MMIC • Frequency Range: 7.9 - 11GHz • Pout: 40 dBm Pulsed (100uS,10%) • PAE: 40% • Small Signal Gain: 22 dB • Bias: VD=24V IDQ=100mA • Integrated Power Detector • Technology: GaN on SiC • Lead-free and RoHS compliant • Package: 6mm x 6mm QFN Applications |
 Microchip |
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SILICON CONTROLLED RECTIFIERS VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operat |
Power Innovations Limited |
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Silicon Carbide Junction Transistor/Schottky Diode 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC Schottky Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low g |
 GeneSiC |
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Silicon Carbide Junction Transistor/Schottky Diode Co-pack 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC Schottky Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low g |
GeneSiC |
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SILICON CONTROLLED RECTIFIERS VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operat |
Power Innovations Limited |
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SILICON CONTROLLED RECTIFIERS ture 3.2 mm from case for 10 seconds TICP107D TICP107M TICP107D TICP107M SYMBOL VDRM VRRM IT(RMS) ITSM di/dt IGM TJ Tstg TL VALUE 400 600 400 600 1 15 100 0.2 -40 to +110 -40 to +125 230 UNIT V V A A A/µs A °C °C °C NOTES: 1. These values apply when |
Power Innovations Limited |
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|
SILICON CONTROLLED RECTIFIERS ture 3.2 mm from case for 10 seconds TICP107D TICP107M TICP107D TICP107M SYMBOL VDRM VRRM IT(RMS) ITSM di/dt IGM TJ Tstg TL VALUE 400 600 400 600 1 15 100 0.2 -40 to +110 -40 to +125 230 UNIT V V A A A/µs A °C °C °C NOTES: 1. These values apply when |
Power Innovations Limited |
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6-18GHz 10W GaN PA MMIC • Frequency Range: 6-18GHz • Pout: 40 dBm @ 24dBm Pin VG • Typical PAE: 20 % • Small Signal Gain: 23dB • Bias: VD=24V IDQ=280mA, Typical Vg=-1.8V • Technology: GaN on SiC • Lead-free and RoHS compliant • Package Dimensions 10mm x 20mm Appli |
Microchip |
| Total 15 results |
