Ignition Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 93334 LINEAR INTEGRATED CIRCUIT HIGH ENERGY IGNITION CIRCUIT  DESCRIPTION This device is designed to use the signa

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr

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Order this document by MC3334/D High Energy Ignition Circuit This device is designed to use the signal from a reluctor type ignition pickup to produc

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr

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www.DataSheet4U.com FM497 Hall Effect Pickup Ignition Controller Specification Oct. 2007 FM497 Hall Effect Pickup Ignition Controller Ver 2.0 Spe

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UNISONIC TECHNOLOGIES CO., LTD UL497 LINEAR INTEGRATED CIRCUIT HALL EFFECT PICKUP IGNITION CONTROLLER  DESCRIPTION As an integrated electronic ig

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ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 General Description The ISL9V3040D3S, ISL9V3040

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NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry i

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NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circu

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 October 20 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKŠ 300mJ, 400V,

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® VB027ASP HIGH VOLTAGE IGNITION COIL DRIVER POWER IC TYPE VB027ASP s s s s V clamp 345 V I cl 9.5 A Il im 160 mA s PRIMARY COIL VOLTAGE INTERN

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® VB029 / VB029SP / VB029(011Y) / VB029(012Y) HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB029 VB029SP VB029(011Y) VB029(012Y) s Vcl Icl I

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UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040

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FAN1100_F085- Ignition Gate Driver IC January 2016 FAN1100_F085 Ignition Gate Driver IC Features  Signal Line Input Buffer  Input spike filter 

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ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3 General Description The ISL9V3040D3S, ISL9V3040

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® VB026BSP HIGH VOLTAGE IGNITION COIL DRIVER POWER IC T YPE VB026BSP s s s s Vc l 360 V I cl 9 A Id 100 mA s PRIMARY COIL VOLTAGE INTERNALLY SE

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® VB927 VB927FI HIGH VOLTAGE IGNITION COIL DRIVER POWER IC s s s s NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT

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NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating

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