Implant Datasheet | Specifications & PDF Download

a FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Currents Crosstalk –124 dB at 1 kHz Low Bias Current: 35 pA max

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Datasheet, Revision 2 ZL70103 Medical Implantable RF Transceiver MICS-Band RF Telemetry Features • 402–405 MHz (10 MICS-band channels) and 433–434 M

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Datasheet, Revision 3 ZL70321 MICS-Band RF Standard Implant Module (SIM) Features • Complete MICS-Band1 RF Telemetry Radio Solution • Implantable Rad

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ZL70101 is not recommended for new designs Data Sheet Revision 9 ZL70101 Medical Implantable RF Transceiver Features • 402–405 MHz (10 MICS channels

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GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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Datasheet, Revision 2 ZL70323 MICS-Band RF Miniaturized Standard Implant Module (MiniSIM) Features • Complete ZL70103-based MICS-Band1 RF Telemetry R

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www.DataSheet4U.com ZL70100 Medical Implantable RF Transceiver Data Sheet Features • • • • • • • 402-405 MHz (10 MICS channels) and 433-434 MHz (2 IS

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ZL70101 Medical Implantable RF Transceiver Data Sheet Features • • • • • • • 402-405 MHz (10 MICS channels) and 433-434 MHz (2 ISM channels) High data

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GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

(9 views)

830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

(9 views)

830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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The clock IC SDL9051 is a low-threshold-voltage, ion-implanted metal gate CMOS integrated circuit that provides signals to drive a 4-digit duplexes li

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GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

(8 views)

GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis

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