isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator L7912CV FEATURES ·Output current in excess of 1.5A ·Output voltage of -12V ·In

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

www.DataSheet.co.kr Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2SC1061 DESCRIPTION With TO-220 package Low saturatio

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested

isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St

isc N-Channel Mosfet Transistor FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Mini

INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Po

isc Three Terminal Negative Voltage Regulator FEATURES ·Output current in excess of 1A ·Output voltage of -15V ·Internal thermal overload protection

isc Triacs BTA16-600BW FEATURES ·With TO-220AB insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF functio

Thyristors TIC106D APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Max IGT of 200μA ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching S

isc Silicon NPN Power Transistor NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fa