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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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September 2007 www.DataSheet4U.com IRS2092 PROTECTED DIGITAL AUDIO AMPLIFIER Features • • • • • • • • • Integrated analog input Class D audio amplif

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www.DataSheet4U.com PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperat

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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Data Sheet No. PD60062 revP (NOTE:For new designs, we recommend IR’s new product IRS2153D) IR2153(D)(S) &(PbF) SELF-OSCILLATING HALF-BRIDGE DRIVER F

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Data Sheet No. PD60147 rev.V IR2110(S)PbF/IR2113(S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully

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PD -96175 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Swi

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features  Plastic package has Underwriters Laboratory Fl

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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PN8570 Chipown Internal BJT Low Standby-Power Quasi-Resonant Primary-side Converter General description The PN8570 consists of a Low Standby-Power

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PD - 97146A IRLR8726PbF IRLU8726PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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Data Sheet No. PD60238 revE IRS2153(1)D(S)PbF SELF-OSCILLATING HALF-BRIDGE DRIVER IC Features „ Integrated 600 V half-bridge gate driver „ CT, RT p

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PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C

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