Part number: IRF9Z24NL
Manufacturer: International Rectifier
File Size: 168.46KB
Download: 📄 Datasheet
Description: Power MOSFET
The IRF9Z24NL is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. Here’s a brief description of its key features and specifications:
### Key Features:
1. **N-Channel MOSFET**: Being an N-channel, it is generally used for switching and amplifying applications where a low on-resistance and high-speed operation are important.
2. **Voltage Ratings**: It typically has a.
l l
D
VDSS = -55V RDS(on) = 0.175Ω
G
ID = -12A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching.
50KΩ
QG
12V
.2µF
-10V
QGS VG QGD
VGS
.3µF
D.U.T.
+VDS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge .
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.
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