Part number: IRF9Z20
Manufacturer: Samsung
File Size: 287.18KB
Download: 📄 Datasheet
Description: P-Channel Power MOSFET
Image gallery
TAGS
📁 Related Datasheet
IRF9Z20 - Power MOSFET
(Vishay)
www.vishay.com
IRF9Z20, SiHF9Z20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-.
IRF9Z20 - P-Channel MOSFET
(International Rectifier)
Edited by Foxit Reader Copyright(C) by Foxit Software Company,2005-2008 For Evaluation Only. www..com
Edited by Foxit Reader Copyright(C) .
IRF9Z22 - P-Channel MOSFET
(International Rectifier)
Edited by Foxit Reader Copyright(C) by Foxit Software Company,2005-2008 For Evaluation Only. www..com
Edited by Foxit Reader Copyright(C) .
IRF9Z22 - Power MOSFET
(Vishay Siliconix)
IRF9Z22, SiHF9Z22 www..com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuratio.
IRF9Z24 - POWER MOSFET
(International Rectifier)
.
IRF9Z24L - Power MOSFET
(International Rectifier)
PD - 9.912A
IRF9Z24S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operat.
IRF9Z24L - Power MOSFET
(Vishay)
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
19
Qgs.
IRF9Z24N - Power MOSFET
(International Rectifier)
PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel.
IRF9Z24NL - Power MOSFET
(International Rectifier)
PD - 91742A
IRF9Z24NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Ope.
IRF9Z24NLPBF - Power MOSFET
(International Rectifier)
Lead-Free
PD- 95770
IRF9Z24NSPbF IRF9Z24NLPBF
www.irf.com
1 04/25/05
IRF9Z24NS/LPbF
2 www.irf.com
IRF9Z24NS/LPbF
www.irf.com
3
IRF9Z24NS/LPb.